Технічний опис DDB6U84N16RRBOSA1 Infineon Technologies
Description: IGBT MOD 1200V 50A 350W, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single Chopper, Operating Temperature: 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 50A, NTC Thermistor: No, Supplier Device Package: Module, IGBT Type: NPT, Part Status: Discontinued at Digi-Key, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 350 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V.
Інші пропозиції DDB6U84N16RRBOSA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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DDB6U84N16RRBOSA1 | Виробник : Infineon Technologies |
 Description: IGBT MOD 1200V 50A 350WPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Chopper Operating Temperature: 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 50A NTC Thermistor: No Supplier Device Package: Module IGBT Type: NPT Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 350 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V |
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