DDC114EUQ-7-F Diodes Incorporated
Виробник: Diodes IncorporatedDescription: PREBIAS TRANSISTOR SOT363 T&R 3K
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 6.00 грн |
| 6000+ | 5.21 грн |
| 9000+ | 4.93 грн |
| 15000+ | 4.32 грн |
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Технічний опис DDC114EUQ-7-F Diodes Incorporated
Description: PREBIAS TRANSISTOR SOT363 T&R 3K, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 200mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 500nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V, Frequency - Transition: 250MHz, Resistor - Base (R1): 10kOhms, Resistor - Emitter Base (R2): 10kOhms, Supplier Device Package: SOT-363, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції DDC114EUQ-7-F за ціною від 6.46 грн до 28.14 грн
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DDC114EUQ-7-F | Виробник : Diodes Incorporated |
Description: PREBIAS TRANSISTOR SOT363 T&R 3K Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SOT-363 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 15200 шт: термін постачання 21-31 дні (днів) |
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DDC114EUQ-7-F | Виробник : Diodes Inc |
Trans Digital BJT NPN 50V 100mA 200mW Automotive 6-Pin SOT-363 T/R |
товару немає в наявності |
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| DDC114EUQ-7-F | Виробник : DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 50mA; 200mW; SOT363; R1: 10kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 50mA Power dissipation: 0.2W Case: SOT363 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ Pulsed collector current: 0.1A Quantity in set/package: 3000pcs. Current gain: 56 Application: automotive industry кількість в упаковці: 1 шт |
товару немає в наявності |
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| DDC114EUQ-7-F | Виробник : Diodes Incorporated |
Bipolar Transistors - BJT Prebias Transistor SOT363 T&R 3K |
товару немає в наявності |
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| DDC114EUQ-7-F | Виробник : DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 50mA; 200mW; SOT363; R1: 10kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 50mA Power dissipation: 0.2W Case: SOT363 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ Pulsed collector current: 0.1A Quantity in set/package: 3000pcs. Current gain: 56 Application: automotive industry |
товару немає в наявності |