DDTB142JU-7-F Diodes Incorporated
Виробник: Diodes IncorporatedDescription: TRANS PREBIAS PNP 50V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 470 Ohms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 13+ | 25.47 грн |
| 19+ | 16.71 грн |
| 100+ | 8.18 грн |
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Технічний опис DDTB142JU-7-F Diodes Incorporated
Description: TRANS PREBIAS PNP 50V SOT323, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V, Supplier Device Package: SOT-323, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Frequency - Transition: 200 MHz, Resistor - Base (R1): 470 Ohms, Resistor - Emitter Base (R2): 10 kOhms.
Інші пропозиції DDTB142JU-7-F
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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DDTB142JU-7-F | Виробник : Diodes Incorporated |
Bipolar Transistors - Pre-Biased 200MW 0.47K 10K |
на замовлення 2148 шт: термін постачання 21-30 дні (днів) |
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DDTB142JU-7-F | Виробник : Diodes Incorporated |
Description: TRANS PREBIAS PNP 50V SOT323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V Supplier Device Package: SOT-323 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 470 Ohms Resistor - Emitter Base (R2): 10 kOhms |
товару немає в наявності |