DDTC114ELP-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: X1-DFN1006-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 70mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Tape & Reel (TR)
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Технічний опис DDTC114ELP-7 Diodes Incorporated
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN, Resistor - Emitter Base (R2): 10 kOhms, Resistor - Base (R1): 10 kOhms, Frequency - Transition: 250 MHz, Power - Max: 250 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Part Status: Active, Supplier Device Package: X1-DFN1006-3, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V, Current - Collector Cutoff (Max): 1µA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 70mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: 3-UFDFN, Packaging: Tape & Reel (TR).
Інші пропозиції DDTC114ELP-7 за ціною від 7.10 грн до 52.18 грн
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DDTC114ELP-7 | Diodes Incorporated |
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN Current - Collector Cutoff (Max): 1µA Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 70mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: 3-UFDFN Packaging: Cut Tape (CT) Resistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 10 kOhms Frequency - Transition: 250 MHz Power - Max: 250 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: X1-DFN1006-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V |
на замовлення 213000 шт: термін постачання 21-31 дні (днів) |
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DDTC114ELP-7 | Diodes Incorporated |
Digital Transistors 250mW Single (R1/R2) |
на замовлення 3519 шт: термін постачання 21-30 дні (днів) |
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| DDTC114ELP-7 |
|
Виробник: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 70mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: X1-DFN1006-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 70mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: X1-DFN1006-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
на замовлення 213000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 31.65 грн |
| DDTC114ELP-7 |
|
Виробник: Diodes Incorporated
Digital Transistors 250mW Single (R1/R2)
Digital Transistors 250mW Single (R1/R2)
на замовлення 3519 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 52.18 грн |
| 11+ | 31.22 грн |
| 100+ | 17.37 грн |
| 500+ | 13.08 грн |
| 1000+ | 11.74 грн |
| 3000+ | 9.92 грн |
| 6000+ | 7.10 грн |