DDTC114GCA-7-F Diodes Incorporated
Виробник: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Emitter Base (R2): 10 kOhms
| Кількість | Ціна |
|---|---|
| 3000+ | 2.74 грн |
| 6000+ | 2.45 грн |
| 9000+ | 2.03 грн |
| 30000+ | 1.87 грн |
| 75000+ | 1.68 грн |
| 150000+ | 1.46 грн |
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Технічний опис DDTC114GCA-7-F Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 500nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V, Supplier Device Package: SOT-23-3, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Frequency - Transition: 250 MHz, Resistor - Emitter Base (R2): 10 kOhms.
Інші пропозиції DDTC114GCA-7-F за ціною від 1.55 грн до 15.82 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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DDTC114GCA-7-F | Diodes Incorporated |
Bipolar Transistors - Pre-Biased 200MW 10K |
на замовлення 1053 шт: термін постачання 21-30 дні (днів) |
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DDTC114GCA-7-F | Diodes Incorporated |
Description: TRANS PREBIAS NPN 50V SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Emitter Base (R2): 10 kOhms |
на замовлення 195000 шт: термін постачання 21-31 дні (днів) |
|
| DDTC114GCA-7-F |
|
Виробник: Diodes Incorporated
Bipolar Transistors - Pre-Biased 200MW 10K
Bipolar Transistors - Pre-Biased 200MW 10K
на замовлення 1053 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 13.70 грн |
| 37+ | 8.98 грн |
| 100+ | 4.57 грн |
| 1000+ | 2.18 грн |
| 3000+ | 1.76 грн |
| 9000+ | 1.62 грн |
| 24000+ | 1.55 грн |
| DDTC114GCA-7-F |
|
Виробник: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Emitter Base (R2): 10 kOhms
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 195000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 15.82 грн |
| 29+ | 10.74 грн |
| 100+ | 5.26 грн |
| 500+ | 4.11 грн |
| 1000+ | 2.86 грн |