Технічний опис DDTC114YLP-7 Diodes Zetex
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN, Current - Collector (Ic) (Max): 100 mA, Part Status: Active, Supplier Device Package: X1-DFN1006-3, DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: 3-UFDFN, Packaging: Tape & Reel (TR), Resistors Included: R1 and R2, Resistor - Emitter Base (R2): 47 kOhms, Resistor - Base (R1): 10 kOhms, Frequency - Transition: 250 MHz, Power - Max: 250 mW, Voltage - Collector Emitter Breakdown (Max): 50 V.
Інші пропозиції DDTC114YLP-7 за ціною від 4.73 грн до 20.88 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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DDTC114YLP-7 | Diodes Incorporated |
 Description: TRANS PREBIAS NPN 50V 0.1A 3DFNResistors Included: R1 and R2 Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: 3-UFDFN Packaging: Cut Tape (CT) Resistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 10 kOhms Frequency - Transition: 250 MHz Power - Max: 250 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: X1-DFN1006-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 5V |
на замовлення 1651 шт: термін постачання 21-31 дні (днів) |
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DDTC114YLP-7 | Diodes Incorporated |
Digital Transistors 250mW Single (R1/R2) |
на замовлення 36 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| DDTC114YLP-7 |
|
Виробник: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Resistors Included: R1 and R2
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: X1-DFN1006-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 5V
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Resistors Included: R1 and R2
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: X1-DFN1006-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 5V
на замовлення 1651 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 20.88 грн |
| 25+ | 12.36 грн |
| 100+ | 7.71 грн |
| 500+ | 5.34 грн |
| 1000+ | 4.73 грн |
| DDTC114YLP-7 |
|
Виробник: Diodes Incorporated
Digital Transistors 250mW Single (R1/R2)
Digital Transistors 250mW Single (R1/R2)
на замовлення 36 шт:
термін постачання 21-30 дні (днів)