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DDTC115GE-7

DDTC115GE-7 Diodes Incorporated

ds30316.pdf
Виробник: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: SOT-523
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Emitter Base (R2): 100 kOhms
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
3000+5.94 грн
6000+5.44 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
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Технічний опис DDTC115GE-7 Diodes Incorporated

Description: TRANS PREBIAS NPN 50V SOT523, Packaging: Tape & Reel (TR), Package / Case: SOT-523, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 500nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V, Supplier Device Package: SOT-523, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 150 mW, Frequency - Transition: 250 MHz, Resistor - Emitter Base (R2): 100 kOhms.

Інші пропозиції DDTC115GE-7

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DDTC115GE-7 DDTC115GE-7 Diodes Incorporated ds30316.pdf Description: TRANS PREBIAS NPN 50V SOT523
Resistor - Emitter Base (R2): 100 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-523
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 30000 шт
В кошику  од. на суму  грн.
DDTC115GE-7 DDTC115GE-7 Diodes Incorporated ds30316.pdf Description: TRANS PREBIAS NPN 50V SOT523
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-523
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 100 kOhms
Frequency - Transition: 250 MHz
товару немає в наявності
В кошику  од. на суму  грн.
DDTC115GE-7 ds30316.pdf
DDTC115GE-7
Виробник: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT523
Resistor - Emitter Base (R2): 100 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-523
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 30000 шт
В кошику  од. на суму  грн.
DDTC115GE-7 ds30316.pdf
DDTC115GE-7
Виробник: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT523
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-523
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 100 kOhms
Frequency - Transition: 250 MHz
товару немає в наявності
В кошику  од. на суму  грн.