Технічний опис DDTC123JLP-7 Diodes Zetex
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-UFDFN, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 5V, Supplier Device Package: X1-DFN1006-3, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 250 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 47 kOhms, Resistors Included: R1 and R2.
Інші пропозиції DDTC123JLP-7 за ціною від 9.63 грн до 40.21 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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DDTC123JLP-7 | Diodes Incorporated |
 Description: TRANS PREBIAS NPN 50V 0.1A 3DFNPackaging: Cut Tape (CT) Package / Case: 3-UFDFN Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 5V Supplier Device Package: X1-DFN1006-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms Resistors Included: R1 and R2 |
на замовлення 2330 шт: термін постачання 21-31 дні (днів) |
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DDTC123JLP-7 | Diodes Incorporated |
Digital Transistors 250mW Single (R1/R2) |
на замовлення 137 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| DDTC123JLP-7 |
|
Виробник: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 5V
Supplier Device Package: X1-DFN1006-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 5V
Supplier Device Package: X1-DFN1006-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
на замовлення 2330 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 40.21 грн |
| 13+ | 23.83 грн |
| 100+ | 15.22 грн |
| 500+ | 10.77 грн |
| 1000+ | 9.63 грн |
| DDTC123JLP-7 |
|
Виробник: Diodes Incorporated
Digital Transistors 250mW Single (R1/R2)
Digital Transistors 250mW Single (R1/R2)
на замовлення 137 шт:
термін постачання 21-30 дні (днів)