DDTD114EC-7-F Diodes Incorporated
Виробник: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT23-3
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 3000+ | 3.71 грн |
| 6000+ | 3.20 грн |
| 9000+ | 3.02 грн |
| 15000+ | 2.63 грн |
| 21000+ | 2.52 грн |
| 30000+ | 2.40 грн |
Відгуки про товар
Написати відгук
Технічний опис DDTD114EC-7-F Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT23-3, Resistors Included: R1 and R2, Resistor - Emitter Base (R2): 10 kOhms, Resistor - Base (R1): 10 kOhms, Frequency - Transition: 200 MHz, Power - Max: 200 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 500 mA, Part Status: Active, Supplier Device Package: SOT-23-3, DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Інші пропозиції DDTD114EC-7-F за ціною від 2.79 грн до 18.33 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
DDTD114EC-7-F | Виробник : Diodes Incorporated |
Description: TRANS PREBIAS NPN 50V SOT23-3 Resistors Included: R1 and R2 Resistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 10 kOhms Frequency - Transition: 200 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 500 mA Part Status: Active Supplier Device Package: SOT-23-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 36609 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
DDTD114EC-7-F | Виробник : Diodes Incorporated |
Digital Transistors 200MW 10K |
на замовлення 5542 шт: термін постачання 21-30 дні (днів) |
|