DDTD114GC-7-F Diodes Incorporated
Виробник: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT23-3
Resistor - Emitter Base (R2): 10 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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Технічний опис DDTD114GC-7-F Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT23-3, Resistor - Emitter Base (R2): 10 kOhms, Frequency - Transition: 200 MHz, Power - Max: 200 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 500 mA, Supplier Device Package: SOT-23-3, DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V, Current - Collector Cutoff (Max): 500nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Інші пропозиції DDTD114GC-7-F
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
DDTD114GC-7-F | Diodes Incorporated |
Bipolar Transistors - Pre-Biased 200MW 10K |
товару немає в наявності |
В кошику од. на суму грн. |
| DDTD114GC-7-F |
|
Виробник: Diodes Incorporated
Bipolar Transistors - Pre-Biased 200MW 10K
Bipolar Transistors - Pre-Biased 200MW 10K
товару немає в наявності
В кошику
од. на суму грн.