DDTD123YC-7-F Diodes Incorporated
Виробник: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 3.72 грн |
| 6000+ | 3.32 грн |
| 9000+ | 2.75 грн |
| 30000+ | 2.54 грн |
| 75000+ | 2.28 грн |
| 150000+ | 1.98 грн |
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Технічний опис DDTD123YC-7-F Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V, Supplier Device Package: SOT-23-3, Part Status: Active, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Frequency - Transition: 200 MHz, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 10 kOhms.
Інші пропозиції DDTD123YC-7-F за ціною від 3.87 грн до 22.32 грн
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DDTD123YC-7-F | Diodes Incorporated |
Description: TRANS PREBIAS NPN 50V SOT23-3 Packaging: Cut Tape (CT) Resistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 2.2 kOhms Frequency - Transition: 200 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 500 mA Part Status: Active Supplier Device Package: SOT-23-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 |
на замовлення 1780886 шт: термін постачання 21-31 дні (днів) |
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DDTD123YC-7-F | Diodes Incorporated |
Digital Transistors 200MW 2.2K 10K |
на замовлення 11983 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| DDTD123YC-7-F |
|
Виробник: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
на замовлення 1780886 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 22.32 грн |
| 21+ | 14.60 грн |
| 100+ | 7.13 грн |
| 500+ | 5.58 грн |
| 1000+ | 3.87 грн |
| DDTD123YC-7-F |
|
Виробник: Diodes Incorporated
Digital Transistors 200MW 2.2K 10K
Digital Transistors 200MW 2.2K 10K
на замовлення 11983 шт:
термін постачання 21-30 дні (днів)