Продукція > TOSHIBA > DF10G5M4N,LF(D

DF10G5M4N,LF(D TOSHIBA

Виробник: TOSHIBA
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; 2A; 30W; bidirectional; ESD; DFN10; Ch: 4
Mounting: SMD
Breakdown voltage: 5V
Max. forward impulse current: 2A
Peak pulse power dissipation: 30W
Version: ESD
Max. off-state voltage: 3.6V
Kind of package: reel; tape
Semiconductor structure: bidirectional
Leakage current: 0.1µA
Case: DFN10
Type of diode: TVS array
Number of channels: 4

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Технічний опис DF10G5M4N,LF(D TOSHIBA

Category: Protection diodes - arrays, Description: Diode: TVS array; 5V; 2A; 30W; bidirectional; ESD; DFN10; Ch: 4, Mounting: SMD, Breakdown voltage: 5V, Max. forward impulse current: 2A, Peak pulse power dissipation: 30W, Version: ESD, Max. off-state voltage: 3.6V, Kind of package: reel; tape, Semiconductor structure: bidirectional, Leakage current: 0.1µA, Case: DFN10, Type of diode: TVS array, Number of channels: 4.