Технічний опис DF10G5M4N,LF(D Toshiba
Category: Protection diodes - arrays, Description: Diode: TVS array; 5V; 2A; 30W; bidirectional; DFN10; Ch: 4; reel,tape, Max. off-state voltage: 3.6V, Semiconductor structure: bidirectional, Max. forward impulse current: 2A, Breakdown voltage: 5V, Leakage current: 0.1µA, Number of channels: 4, Kind of package: reel; tape, Type of diode: TVS array, Version: ESD, Peak pulse power dissipation: 30W, Mounting: SMD, Case: DFN10, кількість в упаковці: 1 шт.
Інші пропозиції DF10G5M4N,LF(D
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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DF10G5M4N,LF(D | Виробник : TOSHIBA |
Category: Protection diodes - arrays Description: Diode: TVS array; 5V; 2A; 30W; bidirectional; DFN10; Ch: 4; reel,tape Max. off-state voltage: 3.6V Semiconductor structure: bidirectional Max. forward impulse current: 2A Breakdown voltage: 5V Leakage current: 0.1µA Number of channels: 4 Kind of package: reel; tape Type of diode: TVS array Version: ESD Peak pulse power dissipation: 30W Mounting: SMD Case: DFN10 кількість в упаковці: 1 шт |
товару немає в наявності |
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DF10G5M4N,LF(D | Виробник : TOSHIBA |
Category: Protection diodes - arrays Description: Diode: TVS array; 5V; 2A; 30W; bidirectional; DFN10; Ch: 4; reel,tape Max. off-state voltage: 3.6V Semiconductor structure: bidirectional Max. forward impulse current: 2A Breakdown voltage: 5V Leakage current: 0.1µA Number of channels: 4 Kind of package: reel; tape Type of diode: TVS array Version: ESD Peak pulse power dissipation: 30W Mounting: SMD Case: DFN10 |
товару немає в наявності |