Технічний опис DF10G5M4N,LF(D Toshiba
Category: Transil diodes - arrays, Description: Diode: TVS array; 5V; 2A; 30W; bidirectional; DFN10; Ch: 4; reel,tape, Type of diode: TVS array, Mounting: SMD, Max. off-state voltage: 3.6V, Semiconductor structure: bidirectional, Features of semiconductor devices: ESD protection, Case: DFN10, Kind of package: reel; tape, Max. forward impulse current: 2A, Leakage current: 0.1µA, Peak pulse power dissipation: 30W, Breakdown voltage: 5V, Number of channels: 4, кількість в упаковці: 1 шт.
Інші пропозиції DF10G5M4N,LF(D
| Фото | Назва | Виробник | Інформація |
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DF10G5M4N,LF(D | Виробник : TOSHIBA |
Category: Transil diodes - arrays Description: Diode: TVS array; 5V; 2A; 30W; bidirectional; DFN10; Ch: 4; reel,tape Type of diode: TVS array Mounting: SMD Max. off-state voltage: 3.6V Semiconductor structure: bidirectional Features of semiconductor devices: ESD protection Case: DFN10 Kind of package: reel; tape Max. forward impulse current: 2A Leakage current: 0.1µA Peak pulse power dissipation: 30W Breakdown voltage: 5V Number of channels: 4 кількість в упаковці: 1 шт |
товар відсутній |
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DF10G5M4N,LF(D | Виробник : TOSHIBA |
Category: Transil diodes - arrays Description: Diode: TVS array; 5V; 2A; 30W; bidirectional; DFN10; Ch: 4; reel,tape Type of diode: TVS array Mounting: SMD Max. off-state voltage: 3.6V Semiconductor structure: bidirectional Features of semiconductor devices: ESD protection Case: DFN10 Kind of package: reel; tape Max. forward impulse current: 2A Leakage current: 0.1µA Peak pulse power dissipation: 30W Breakdown voltage: 5V Number of channels: 4 |
товар відсутній |