Технічний опис DF10G5M4N,LF(D Toshiba
Category: Protection diodes - arrays, Description: Diode: TVS array; 5V; 2A; 30W; bidirectional; DFN10; Ch: 4; reel,tape, Version: ESD, Mounting: SMD, Type of diode: TVS array, Kind of package: reel; tape, Leakage current: 0.1µA, Max. forward impulse current: 2A, Max. off-state voltage: 3.6V, Number of channels: 4, Breakdown voltage: 5V, Peak pulse power dissipation: 30W, Semiconductor structure: bidirectional, Case: DFN10, кількість в упаковці: 1 шт.
Інші пропозиції DF10G5M4N,LF(D
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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DF10G5M4N,LF(D | Виробник : TOSHIBA |
Category: Protection diodes - arrays Description: Diode: TVS array; 5V; 2A; 30W; bidirectional; DFN10; Ch: 4; reel,tape Version: ESD Mounting: SMD Type of diode: TVS array Kind of package: reel; tape Leakage current: 0.1µA Max. forward impulse current: 2A Max. off-state voltage: 3.6V Number of channels: 4 Breakdown voltage: 5V Peak pulse power dissipation: 30W Semiconductor structure: bidirectional Case: DFN10 кількість в упаковці: 1 шт |
товару немає в наявності |
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DF10G5M4N,LF(D | Виробник : TOSHIBA |
Category: Protection diodes - arrays Description: Diode: TVS array; 5V; 2A; 30W; bidirectional; DFN10; Ch: 4; reel,tape Version: ESD Mounting: SMD Type of diode: TVS array Kind of package: reel; tape Leakage current: 0.1µA Max. forward impulse current: 2A Max. off-state voltage: 3.6V Number of channels: 4 Breakdown voltage: 5V Peak pulse power dissipation: 30W Semiconductor structure: bidirectional Case: DFN10 |
товару немає в наявності |