DF10G5M4N,LF(D TOSHIBA

Category: Protection diodes - arrays, Description: Diode: TVS array; 5V; 2A; 30W; bidirectional; DFN10; Ch: 4; reel,tape, Type of diode: TVS array, Breakdown voltage: 5V, Max. forward impulse current: 2A, Peak pulse power dissipation: 30W, Semiconductor structure: bidirectional, Mounting: SMD, Case: DFN10, Max. off-state voltage: 3.6V, Leakage current: 0.1µA, Number of channels: 4, Kind of package: reel; tape, Version: ESD.