Технічний опис DF11MR12W1M1PB11BPSA1 Infineon Technologies
Description: MOSFET 2N-CH 1200V 50A AG-EASY1B, Supplier Device Package: AG-EASY1B-2, Vgs(th) (Max) @ Id: 5.55V @ 20mA, Gate Charge (Qg) (Max) @ Vgs: 124nC @ 15V, Rds On (Max) @ Id, Vgs: 22.5mOhm @ 50A, 15V, Input Capacitance (Ciss) (Max) @ Vds: 3680pF @ 800V, Current - Continuous Drain (Id) @ 25°C: 50A (Tj), Drain to Source Voltage (Vdss): 1200V (1.2kV), Technology: Silicon Carbide (SiC), Operating Temperature: -40°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tray.
Інші пропозиції DF11MR12W1M1PB11BPSA1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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DF11MR12W1M1PB11BPSA1 | Infineon Technologies |
 Description: MOSFET 2N-CH 1200V 50A AG-EASY1BSupplier Device Package: AG-EASY1B-2 Vgs(th) (Max) @ Id: 5.55V @ 20mA Gate Charge (Qg) (Max) @ Vgs: 124nC @ 15V Rds On (Max) @ Id, Vgs: 22.5mOhm @ 50A, 15V Input Capacitance (Ciss) (Max) @ Vds: 3680pF @ 800V Current - Continuous Drain (Id) @ 25°C: 50A (Tj) Drain to Source Voltage (Vdss): 1200V (1.2kV) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray |
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В кошику од. на суму грн. |
| DF11MR12W1M1PB11BPSA1 |
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Виробник: Infineon Technologies
Description: MOSFET 2N-CH 1200V 50A AG-EASY1B
Supplier Device Package: AG-EASY1B-2
Vgs(th) (Max) @ Id: 5.55V @ 20mA
Gate Charge (Qg) (Max) @ Vgs: 124nC @ 15V
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 50A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 3680pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Description: MOSFET 2N-CH 1200V 50A AG-EASY1B
Supplier Device Package: AG-EASY1B-2
Vgs(th) (Max) @ Id: 5.55V @ 20mA
Gate Charge (Qg) (Max) @ Vgs: 124nC @ 15V
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 50A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 3680pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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В кошику
од. на суму грн.