DF150R12RT4HOSA1 Infineon Technologies
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 150A 790W MOD
Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 790 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 150 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
Operating Temperature: -40°C ~ 150°C
Configuration: Single Chopper
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
| Кількість | Ціна |
|---|---|
| 3+ | 7281.64 грн |
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Технічний опис DF150R12RT4HOSA1 Infineon Technologies
Description: IGBT MOD 1200V 150A 790W MOD, Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V, Current - Collector Cutoff (Max): 1 mA, Power - Max: 790 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 150 A, Part Status: Active, IGBT Type: Trench Field Stop, Supplier Device Package: Module, NTC Thermistor: No, Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A, Operating Temperature: -40°C ~ 150°C, Configuration: Single Chopper, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Bulk.
Інші пропозиції DF150R12RT4HOSA1
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DF150R12RT4HOSA1 | Виробник : Infineon Technologies |
Description: IGBT MOD 1200V 150A 790W MOD Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Chopper Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A NTC Thermistor: No Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 790 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V |
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