DF17MR12W1M1HFB86BPSA1 Infineon Technologies
Виробник: Infineon Technologies
Discrete Semiconductor Modules EasyPACK module with CoolSiC Trench MOSFET and PressFIT / NTC
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Технічний опис DF17MR12W1M1HFB86BPSA1 Infineon Technologies
Description: INFINEON - DF17MR12W1M1HFB86BPSA1 - Siliziumkarbid-MOSFET, Booster, n-Kanal, 50 A, 1.2 kV, 0.024 ohm, Modul, tariffCode: 85412900, Drain-Source-Spannung Vds: 1.2kV, rohsCompliant: YES, Dauer-Drainstrom Id: 50A, hazardous: false, rohsPhthalatesCompliant: YES, isCanonical: Y, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 5.15V, MOSFET-Modul-Konfiguration: Booster, euEccn: NLR, Verlustleistung: -, Bauform - Transistor: Modul, Anzahl der Pins: 21Pin(s), Produktpalette: EasyPACK Series, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 18V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 0.024ohm, SVHC: No SVHC (25-Jun-2025).
Інші пропозиції DF17MR12W1M1HFB86BPSA1 за ціною від 3285.06 грн до 5016.83 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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|---|---|---|---|---|---|---|---|---|---|---|---|
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DF17MR12W1M1HFB86BPSA1 | INFINEON |
Description: INFINEON - DF17MR12W1M1HFB86BPSA1 - Siliziumkarbid-MOSFET, Booster, n-Kanal, 50 A, 1.2 kV, 0.024 ohm, Modul tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: YES Dauer-Drainstrom Id: 50A hazardous: false rohsPhthalatesCompliant: YES isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5.15V MOSFET-Modul-Konfiguration: Booster euEccn: NLR Verlustleistung: - Bauform - Transistor: Modul Anzahl der Pins: 21Pin(s) Produktpalette: EasyPACK Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.024ohm SVHC: No SVHC (25-Jun-2025) |
на замовлення 16 шт: термін постачання 21-31 дні (днів) |
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| DF17MR12W1M1HFB86BPSA1 | Infineon Technologies |
Description: EASY STANDARD Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 3 N-Channel Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 50A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 800V Rds On (Max) @ Id, Vgs: 24mOhm @ 50A, 18V Gate Charge (Qg) (Max) @ Vgs: 74nC @ 18V Vgs(th) (Max) @ Id: 5.15V @ 20mA |
на замовлення 24 шт: термін постачання 21-31 дні (днів) |
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| DF17MR12W1M1HFB86BPSA1 |
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Виробник: INFINEON
Description: INFINEON - DF17MR12W1M1HFB86BPSA1 - Siliziumkarbid-MOSFET, Booster, n-Kanal, 50 A, 1.2 kV, 0.024 ohm, Modul
tariffCode: 85412900
Drain-Source-Spannung Vds: 1.2kV
rohsCompliant: YES
Dauer-Drainstrom Id: 50A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 5.15V
MOSFET-Modul-Konfiguration: Booster
euEccn: NLR
Verlustleistung: -
Bauform - Transistor: Modul
Anzahl der Pins: 21Pin(s)
Produktpalette: EasyPACK Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 18V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.024ohm
SVHC: No SVHC (25-Jun-2025)
Description: INFINEON - DF17MR12W1M1HFB86BPSA1 - Siliziumkarbid-MOSFET, Booster, n-Kanal, 50 A, 1.2 kV, 0.024 ohm, Modul
tariffCode: 85412900
Drain-Source-Spannung Vds: 1.2kV
rohsCompliant: YES
Dauer-Drainstrom Id: 50A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 5.15V
MOSFET-Modul-Konfiguration: Booster
euEccn: NLR
Verlustleistung: -
Bauform - Transistor: Modul
Anzahl der Pins: 21Pin(s)
Produktpalette: EasyPACK Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 18V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.024ohm
SVHC: No SVHC (25-Jun-2025)
на замовлення 16 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 5016.83 грн |
| 5+ | 4641.04 грн |
| 10+ | 4265.25 грн |
| DF17MR12W1M1HFB86BPSA1 |
|
Виробник: Infineon Technologies
Description: EASY STANDARD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 3 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 800V
Rds On (Max) @ Id, Vgs: 24mOhm @ 50A, 18V
Gate Charge (Qg) (Max) @ Vgs: 74nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 20mA
Description: EASY STANDARD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 3 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 800V
Rds On (Max) @ Id, Vgs: 24mOhm @ 50A, 18V
Gate Charge (Qg) (Max) @ Vgs: 74nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 20mA
на замовлення 24 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 4499.87 грн |
| 24+ | 3285.06 грн |