DF23MR12W1M1PB11BPSA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 1200V 25A AG-EASY1B
Part Status: Obsolete
Supplier Device Package: AG-EASY1B-2
Vgs(th) (Max) @ Id: 5.55V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 25A (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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Технічний опис DF23MR12W1M1PB11BPSA1 Infineon Technologies
Description: MOSFET 2N-CH 1200V 25A AG-EASY1B, Part Status: Obsolete, Supplier Device Package: AG-EASY1B-2, Vgs(th) (Max) @ Id: 5.55V @ 10mA, Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V, Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V, Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V, Current - Continuous Drain (Id) @ 25°C: 25A (Tj), Drain to Source Voltage (Vdss): 1200V (1.2kV), Technology: Silicon Carbide (SiC), Operating Temperature: -40°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tray.
Інші пропозиції DF23MR12W1M1PB11BPSA1 за ціною від 6397.09 грн до 8343.02 грн
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DF23MR12W1M1PB11BPSA1 | Infineon Technologies |
Description: MOSFET 2N-CH 1200V 25A AG-EASY1B Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 25A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V Vgs(th) (Max) @ Id: 5.55V @ 10mA Supplier Device Package: AG-EASY1B-2 |
на замовлення 30 шт: термін постачання 21-31 дні (днів) |
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| DF23MR12W1M1PB11BPSA1 | Infineon Technologies |
Discrete Semiconductor Modules LOW POWER EASY |
на замовлення 22 шт: термін постачання 21-30 дні (днів) |
|
| DF23MR12W1M1PB11BPSA1 |
|
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 1200V 25A AG-EASY1B
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 25A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 10mA
Supplier Device Package: AG-EASY1B-2
Description: MOSFET 2N-CH 1200V 25A AG-EASY1B
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 25A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 10mA
Supplier Device Package: AG-EASY1B-2
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 6397.09 грн |
| DF23MR12W1M1PB11BPSA1 |
|
Виробник: Infineon Technologies
Discrete Semiconductor Modules LOW POWER EASY
Discrete Semiconductor Modules LOW POWER EASY
на замовлення 22 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 8343.02 грн |
| 10+ | 7691.30 грн |
| 120+ | 6687.39 грн |