DF2S14P2FU,H3F Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 12.6VWM 32VC USC
Unidirectional Channels: 1
Supplier Device Package: USC
Voltage - Reverse Standoff (Typ): 12.6V (Max)
Current - Peak Pulse (10/1000µs): 50A (8/20µs)
Capacitance @ Frequency: 270pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1600W (1.6kW)
Voltage - Clamping (Max) @ Ipp: 32V
Voltage - Breakdown (Min): 12.9V
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Технічний опис DF2S14P2FU,H3F Toshiba Semiconductor and Storage
Description: TVS DIODE 12.6VWM 32VC USC, Unidirectional Channels: 1, Supplier Device Package: USC, Voltage - Reverse Standoff (Typ): 12.6V (Max), Current - Peak Pulse (10/1000µs): 50A (8/20µs), Capacitance @ Frequency: 270pF @ 1MHz, Applications: General Purpose, Operating Temperature: 150°C (TJ), Type: Zener, Mounting Type: Surface Mount, Package / Case: SC-76, SOD-323, Packaging: Tape & Reel (TR), Part Status: Active, Power Line Protection: No, Power - Peak Pulse: 1600W (1.6kW), Voltage - Clamping (Max) @ Ipp: 32V, Voltage - Breakdown (Min): 12.9V.
Інші пропозиції DF2S14P2FU,H3F за ціною від 7.15 грн до 30.02 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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DF2S14P2FU,H3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 12.6VWM 32VC USC Part Status: Active Power Line Protection: No Power - Peak Pulse: 1600W (1.6kW) Voltage - Clamping (Max) @ Ipp: 32V Voltage - Breakdown (Min): 12.9V Unidirectional Channels: 1 Supplier Device Package: USC Voltage - Reverse Standoff (Typ): 12.6V (Max) Current - Peak Pulse (10/1000µs): 50A (8/20µs) Capacitance @ Frequency: 270pF @ 1MHz Applications: General Purpose Operating Temperature: 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Packaging: Cut Tape (CT) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DF2S14P2FU,H3F | Toshiba |
ESD Protection Diodes / TVS Diodes IPP 50A VESD +/-30kV Bi-Dir ESD Protectn |
на замовлення 5243 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| DF2S14P2FU,H3F |
|
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 12.6VWM 32VC USC
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1600W (1.6kW)
Voltage - Clamping (Max) @ Ipp: 32V
Voltage - Breakdown (Min): 12.9V
Unidirectional Channels: 1
Supplier Device Package: USC
Voltage - Reverse Standoff (Typ): 12.6V (Max)
Current - Peak Pulse (10/1000µs): 50A (8/20µs)
Capacitance @ Frequency: 270pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
Description: TVS DIODE 12.6VWM 32VC USC
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1600W (1.6kW)
Voltage - Clamping (Max) @ Ipp: 32V
Voltage - Breakdown (Min): 12.9V
Unidirectional Channels: 1
Supplier Device Package: USC
Voltage - Reverse Standoff (Typ): 12.6V (Max)
Current - Peak Pulse (10/1000µs): 50A (8/20µs)
Capacitance @ Frequency: 270pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 30.02 грн |
| 17+ | 18.09 грн |
| 100+ | 11.44 грн |
| 500+ | 8.03 грн |
| 1000+ | 7.15 грн |
| DF2S14P2FU,H3F |
|
Виробник: Toshiba
ESD Protection Diodes / TVS Diodes IPP 50A VESD +/-30kV Bi-Dir ESD Protectn
ESD Protection Diodes / TVS Diodes IPP 50A VESD +/-30kV Bi-Dir ESD Protectn
на замовлення 5243 шт:
термін постачання 21-30 дні (днів)