DF2S6P1CT,L3F Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: UNIDIRECTIONAL ESD DIODE VRWM=5.
Power Line Protection: No
Power - Peak Pulse: 160W
Voltage - Clamping (Max) @ Ipp: 16V
Voltage - Breakdown (Min): 5.6V
Unidirectional Channels: 1
Supplier Device Package: CST2
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Capacitance @ Frequency: 90pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-882
Packaging: Cut Tape (CT)
| Кількість | Ціна |
|---|---|
| 12+ | 27.69 грн |
| 19+ | 16.46 грн |
| 100+ | 10.36 грн |
| 500+ | 7.25 грн |
| 1000+ | 6.44 грн |
| 2000+ | 5.77 грн |
| 5000+ | 4.95 грн |
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Технічний опис DF2S6P1CT,L3F Toshiba Semiconductor and Storage
Description: UNIDIRECTIONAL ESD DIODE VRWM=5., Power Line Protection: No, Power - Peak Pulse: 160W, Voltage - Clamping (Max) @ Ipp: 16V, Voltage - Breakdown (Min): 5.6V, Unidirectional Channels: 1, Supplier Device Package: CST2, Current - Peak Pulse (10/1000µs): 10A (8/20µs), Capacitance @ Frequency: 90pF @ 1MHz, Applications: General Purpose, Operating Temperature: 150°C (TJ), Type: Zener, Mounting Type: Surface Mount, Package / Case: SOD-882, Packaging: Tape & Reel (TR).
Інші пропозиції DF2S6P1CT,L3F
| Фото | Назва | Виробник | Інформація |
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DF2S6P1CT,L3F | Виробник : Toshiba Semiconductor and Storage |
Description: UNIDIRECTIONAL ESD DIODE VRWM=5. Power Line Protection: No Power - Peak Pulse: 160W Voltage - Clamping (Max) @ Ipp: 16V Voltage - Breakdown (Min): 5.6V Unidirectional Channels: 1 Supplier Device Package: CST2 Current - Peak Pulse (10/1000µs): 10A (8/20µs) Capacitance @ Frequency: 90pF @ 1MHz Applications: General Purpose Operating Temperature: 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: SOD-882 Packaging: Tape & Reel (TR) |
товару немає в наявності |
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| DF2S6P1CT,L3F | Виробник : Toshiba |
Toshiba |
товару немає в наявності |