DF400R12KE3HOSA1 Infineon Technologies
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 580A 2000W
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 2000 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 580 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
Operating Temperature: -40°C ~ 125°C
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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Технічний опис DF400R12KE3HOSA1 Infineon Technologies
Description: IGBT MOD 1200V 580A 2000W, Input Capacitance (Cies) @ Vce: 28 nF @ 25 V, Current - Collector Cutoff (Max): 5 mA, Power - Max: 2000 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 580 A, Part Status: Active, IGBT Type: Trench Field Stop, Supplier Device Package: Module, NTC Thermistor: No, Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A, Operating Temperature: -40°C ~ 125°C, Configuration: Single, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Bulk.
Інші пропозиції DF400R12KE3HOSA1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
|
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DF400R12KE3HOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 580A 2000W Input Capacitance (Cies) @ Vce: 28 nF @ 25 V Current - Collector Cutoff (Max): 5 mA Power - Max: 2000 W Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 580 A Part Status: Active IGBT Type: Trench Field Stop Supplier Device Package: Module NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A Operating Temperature: -40°C ~ 125°C Configuration: Single Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. |
 |
DF400R12KE3HOSA1 | Infineon Technologies |
IGBT Modules MEDIUM POWER 62MM |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. |
 |
DF400R12KE3HOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; screw Type of semiconductor module: IGBT Case: AG-62MM-1 Electrical mounting: screw Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 400A Pulsed collector current: 800A Max. off-state voltage: 1.2kV Topology: buck chopper Power dissipation: 2kW Semiconductor structure: diode/transistor |
товару немає в наявності |
В кошику од. на суму грн. |
| DF400R12KE3HOSA1 |
|
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 580A 2000W
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 2000 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 580 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
Operating Temperature: -40°C ~ 125°C
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Description: IGBT MOD 1200V 580A 2000W
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 2000 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 580 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
Operating Temperature: -40°C ~ 125°C
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 10 шт
В кошику
од. на суму грн.
| DF400R12KE3HOSA1 |
|
Виробник: Infineon Technologies
IGBT Modules MEDIUM POWER 62MM
IGBT Modules MEDIUM POWER 62MM
товару немає в наявності
Мінімальне замовлення: 10 шт
В кошику
од. на суму грн.
| DF400R12KE3HOSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Max. off-state voltage: 1.2kV
Topology: buck chopper
Power dissipation: 2kW
Semiconductor structure: diode/transistor
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Max. off-state voltage: 1.2kV
Topology: buck chopper
Power dissipation: 2kW
Semiconductor structure: diode/transistor
товару немає в наявності
В кошику
од. на суму грн.