DF6S25P3NU,LF(B Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: LF ESD PROTECTION DIODES 21V, SO
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 650pF @ 1MHz
Current - Peak Pulse (10/1000µs): 110A (8/20µs)
Voltage - Reverse Standoff (Typ): 22V (Max)
Supplier Device Package: 6-UDFNB (2x2)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.5V
Voltage - Clamping (Max) @ Ipp: 46V
Power - Peak Pulse: 5060W (5.06kW)
Power Line Protection: No
Description: LF ESD PROTECTION DIODES 21V, SO
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 650pF @ 1MHz
Current - Peak Pulse (10/1000µs): 110A (8/20µs)
Voltage - Reverse Standoff (Typ): 22V (Max)
Supplier Device Package: 6-UDFNB (2x2)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.5V
Voltage - Clamping (Max) @ Ipp: 46V
Power - Peak Pulse: 5060W (5.06kW)
Power Line Protection: No
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 17.84 грн |
| 6000+ | 16.00 грн |
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Технічний опис DF6S25P3NU,LF(B Toshiba Semiconductor and Storage
Description: LF ESD PROTECTION DIODES 21V, SO, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: 150°C (TJ), Applications: General Purpose, Capacitance @ Frequency: 650pF @ 1MHz, Current - Peak Pulse (10/1000µs): 110A (8/20µs), Voltage - Reverse Standoff (Typ): 22V (Max), Supplier Device Package: 6-UDFNB (2x2), Unidirectional Channels: 1, Voltage - Breakdown (Min): 22.5V, Voltage - Clamping (Max) @ Ipp: 46V, Power - Peak Pulse: 5060W (5.06kW), Power Line Protection: No.
Інші пропозиції DF6S25P3NU,LF(B за ціною від 17.50 грн до 45.77 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DF6S25P3NU,LF(B | Виробник : Toshiba Semiconductor and Storage |
Description: LF ESD PROTECTION DIODES 21V, SO Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 650pF @ 1MHz Current - Peak Pulse (10/1000µs): 110A (8/20µs) Voltage - Reverse Standoff (Typ): 22V (Max) Supplier Device Package: 6-UDFNB (2x2) Unidirectional Channels: 1 Voltage - Breakdown (Min): 22.5V Voltage - Clamping (Max) @ Ipp: 46V Power - Peak Pulse: 5060W (5.06kW) Power Line Protection: No |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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