Технічний опис DF75R12W1H4FB11BOMA2 Infineon Technologies
Description: IGBT MOD 1200V 25A 20MW, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 25A, NTC Thermistor: Yes, Supplier Device Package: Module, Part Status: Last Time Buy, Current - Collector (Ic) (Max): 25 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 20 mW, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 2 nF @ 25 V.
Інші пропозиції DF75R12W1H4FB11BOMA2
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DF75R12W1H4FB11BOMA2 | Виробник : Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 25A NTC Thermistor: Yes Supplier Device Package: Module Part Status: Last Time Buy Current - Collector (Ic) (Max): 25 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 2 nF @ 25 V |
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