DG2012DL-T1-GE3

DG2012DL-T1-GE3 Vishay Siliconix


Виробник: Vishay Siliconix
Description: IC SWITCH SPDT X 1 1.8OHM SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 1.8Ohm
Supplier Device Package: SC-70-6
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: 20pC
Crosstalk: -64dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 250mOhm (Max)
Switch Time (Ton, Toff) (Max): 38ns, 32ns
Channel Capacitance (CS(off), CD(off)): 20pF
Current - Leakage (IS(off)) (Max): 500pA
Number of Circuits: 1
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Технічний опис DG2012DL-T1-GE3 Vishay Siliconix

Description: IC SWITCH SPDT X 1 1.8OHM SC70-6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 85°C (TA), On-State Resistance (Max): 1.8Ohm, Supplier Device Package: SC-70-6, Voltage - Supply, Single (V+): 1.8V ~ 5.5V, Charge Injection: 20pC, Crosstalk: -64dB @ 1MHz, Switch Circuit: SPDT, Multiplexer/Demultiplexer Circuit: 2:1, Channel-to-Channel Matching (ΔRon): 250mOhm (Max), Switch Time (Ton, Toff) (Max): 38ns, 32ns, Channel Capacitance (CS(off), CD(off)): 20pF, Current - Leakage (IS(off)) (Max): 500pA, Number of Circuits: 1.