Технічний опис DG2017DN-T1-E4 Vishay
Description: IC SWITCH DPDT X 2 3.7OHM 16QFN, Packaging: Tape & Reel (TR), Package / Case: 16-VQFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 85°C (TA), On-State Resistance (Max): 3.7Ohm, Supplier Device Package: 16-QFN (4x4), Voltage - Supply, Single (V+): 2V ~ 5.5V, Charge Injection: 2pC, Crosstalk: -69dB @ 1MHz, Switch Circuit: DPDT, Multiplexer/Demultiplexer Circuit: 2:2, Channel-to-Channel Matching (ΔRon): 300mOhm (Max), Switch Time (Ton, Toff) (Max): 85ns, 35ns, Channel Capacitance (CS(off), CD(off)): 43pF, Current - Leakage (IS(off)) (Max): 500pA, Number of Circuits: 2.
Інші пропозиції DG2017DN-T1-E4
Фото | Назва | Виробник | Інформація |
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DG2017DN-T1-E4 | Виробник : Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: 16-VQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 3.7Ohm Supplier Device Package: 16-QFN (4x4) Voltage - Supply, Single (V+): 2V ~ 5.5V Charge Injection: 2pC Crosstalk: -69dB @ 1MHz Switch Circuit: DPDT Multiplexer/Demultiplexer Circuit: 2:2 Channel-to-Channel Matching (ΔRon): 300mOhm (Max) Switch Time (Ton, Toff) (Max): 85ns, 35ns Channel Capacitance (CS(off), CD(off)): 43pF Current - Leakage (IS(off)) (Max): 500pA Number of Circuits: 2 |
товару немає в наявності |