Технічний опис DG2535DN-T1-E4 Vishay
Description: IC SWITCH SPDT X 2 500MOHM 10DFN, Packaging: Tape & Reel (TR), Package / Case: 10-VFDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 85°C (TA), On-State Resistance (Max): 500mOhm, Supplier Device Package: 10-DFN (3x3), Voltage - Supply, Single (V+): 3V, Charge Injection: 21pC, Crosstalk: -69dB @ 100kHz, Switch Circuit: SPDT, Multiplexer/Demultiplexer Circuit: 2:1, Channel-to-Channel Matching (ΔRon): 50mOhm (Max), Switch Time (Ton, Toff) (Max): 82ns, 73ns, Channel Capacitance (CS(off), CD(off)): 145pF, Current - Leakage (IS(off)) (Max): 1nA, Number of Circuits: 2.
Інші пропозиції DG2535DN-T1-E4
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DG2535DN-T1-E4 | Виробник : Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: 10-VFDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 500mOhm Supplier Device Package: 10-DFN (3x3) Voltage - Supply, Single (V+): 3V Charge Injection: 21pC Crosstalk: -69dB @ 100kHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 50mOhm (Max) Switch Time (Ton, Toff) (Max): 82ns, 73ns Channel Capacitance (CS(off), CD(off)): 145pF Current - Leakage (IS(off)) (Max): 1nA Number of Circuits: 2 |
товару немає в наявності |