DG75X12T2 STARPOWER SEMICONDUCTOR
Виробник: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 75A; 852W; TO247PLUS
Collector current: 75A
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 559ns
Power dissipation: 852W
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
Gate charge: 0.49µC
Turn-on time: 163ns
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 798.24 грн |
| 3+ | 667.27 грн |
| 10+ | 589.15 грн |
| 30+ | 529.33 грн |
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Технічний опис DG75X12T2 STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors, Description: Transistor: IGBT; 1200V; 75A; 852W; TO247PLUS, Collector current: 75A, Case: TO247PLUS, Gate-emitter voltage: ±20V, Pulsed collector current: 225A, Features of semiconductor devices: integrated anti-parallel diode, Turn-off time: 559ns, Power dissipation: 852W, Collector-emitter voltage: 1.2kV, Type of transistor: IGBT, Kind of package: tube, Mounting: THT, Gate charge: 0.49µC, Turn-on time: 163ns.