Технічний опис DGD0579UFNQ-7 Diodes Inc
Description: IC GATE DRVR HALF-BRIDGE 10UFDFN, Packaging: Tape & Reel (TR), Package / Case: 10-UFDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 125°C (TA), Voltage - Supply: 7V ~ 18V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 100 V, Supplier Device Package: U-DFN3030-10, Rise / Fall Time (Typ): 19ns, 15ns, Channel Type: Independent, Driven Configuration: Half-Bridge, Number of Drivers: 2, Gate Type: N-Channel MOSFET, Logic Voltage - VIL, VIH: 0.8V, 2.5V, Current - Peak Output (Source, Sink): 1.5A, 2.5A, Grade: Automotive, Qualification: AEC-Q100.
Інші пропозиції DGD0579UFNQ-7
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
---|---|---|---|---|---|
DGD0579UFNQ-7 | Виробник : Diodes Zetex |
![]() |
товару немає в наявності |
||
DGD0579UFNQ-7 | Виробник : Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 10-UFDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 7V ~ 18V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 100 V Supplier Device Package: U-DFN3030-10 Rise / Fall Time (Typ): 19ns, 15ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 1.5A, 2.5A Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
||
DGD0579UFNQ-7 | Виробник : Diodes Incorporated |
![]() |
товару немає в наявності |