
DGD2181S8-13 Diodes Incorporated

Description: IC GATE DRVR HALF-BRIDGE 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 1902 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна |
---|---|
2+ | 177.83 грн |
10+ | 107.33 грн |
25+ | 90.64 грн |
100+ | 67.31 грн |
250+ | 58.59 грн |
500+ | 53.22 грн |
1000+ | 47.93 грн |
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Технічний опис DGD2181S8-13 Diodes Incorporated
Description: IC GATE DRVR HALF-BRIDGE 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Voltage - Supply: 10V ~ 20V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 600 V, Supplier Device Package: 8-SO, Rise / Fall Time (Typ): 40ns, 20ns, Channel Type: Independent, Driven Configuration: Half-Bridge, Number of Drivers: 2, Gate Type: IGBT, MOSFET (N-Channel), Logic Voltage - VIL, VIH: 0.8V, 2.5V, Current - Peak Output (Source, Sink): 1.9A, 2.3A, Part Status: Not For New Designs, DigiKey Programmable: Not Verified.
Інші пропозиції DGD2181S8-13
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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DGD2181S8-13 | Виробник : Diodes Incorporated |
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на замовлення 2290 шт: термін постачання 21-30 дні (днів) |
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DGD2181S8-13 | Виробник : Diodes Inc |
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товару немає в наявності |
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DGD2181S8-13 | Виробник : DIODES INCORPORATED |
![]() Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.3÷1.9A Supply voltage: 10...20V Output current: -2.3...1.9A Type of integrated circuit: driver Impulse rise time: 60ns Pulse fall time: 35ns Number of channels: 1 Kind of package: reel; tape Kind of integrated circuit: gate driver; high-/low-side Topology: IGBT half-bridge; MOSFET half-bridge Mounting: SMD Operating temperature: -40...125°C Case: SO8 кількість в упаковці: 1 шт |
товару немає в наявності |
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DGD2181S8-13 | Виробник : Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-SO Rise / Fall Time (Typ): 40ns, 20ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 1.9A, 2.3A Part Status: Not For New Designs DigiKey Programmable: Not Verified |
товару немає в наявності |
|
DGD2181S8-13 | Виробник : DIODES INCORPORATED |
![]() Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.3÷1.9A Supply voltage: 10...20V Output current: -2.3...1.9A Type of integrated circuit: driver Impulse rise time: 60ns Pulse fall time: 35ns Number of channels: 1 Kind of package: reel; tape Kind of integrated circuit: gate driver; high-/low-side Topology: IGBT half-bridge; MOSFET half-bridge Mounting: SMD Operating temperature: -40...125°C Case: SO8 |
товару немає в наявності |