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DGTD65T60S2PT Diodes


Виробник: Diodes
Trans IGBT Chip N-CH 650V 100A 428000mW 3-Pin(3+Tab) TO-247 Транзистори
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Технічний опис DGTD65T60S2PT Diodes

Description: IGBT FIELD STOP 650V 100A TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 205 ns, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 60A, Supplier Device Package: TO-247, IGBT Type: Field Stop, Td (on/off) @ 25°C: 42ns/142ns, Switching Energy: 920µJ (on), 530µJ (off), Test Condition: 400V, 60A, 7Ohm, 15V, Gate Charge: 95 nC, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 180 A, Power - Max: 428 W.

Інші пропозиції DGTD65T60S2PT

Фото Назва Виробник Інформація Доступність
Ціна
DGTD65T60S2PT DGTD65T60S2PT Diodes Incorporated Description: IGBT FIELD STOP 650V 100A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 205 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 60A
Supplier Device Package: TO-247
IGBT Type: Field Stop
Td (on/off) @ 25°C: 42ns/142ns
Switching Energy: 920µJ (on), 530µJ (off)
Test Condition: 400V, 60A, 7Ohm, 15V
Gate Charge: 95 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 428 W
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DGTD65T60S2PT Diodes Incorporated DGTD65T60S2PT-1360853.pdf IGBT Transistors IGBT 600V-X TO247 TUBE 0.45K
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DGTD65T60S2PT
DGTD65T60S2PT
Виробник: Diodes Incorporated
Description: IGBT FIELD STOP 650V 100A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 205 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 60A
Supplier Device Package: TO-247
IGBT Type: Field Stop
Td (on/off) @ 25°C: 42ns/142ns
Switching Energy: 920µJ (on), 530µJ (off)
Test Condition: 400V, 60A, 7Ohm, 15V
Gate Charge: 95 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 428 W
товару немає в наявності
В кошику  од. на суму  грн.
DGTD65T60S2PT DGTD65T60S2PT-1360853.pdf
Виробник: Diodes Incorporated
IGBT Transistors IGBT 600V-X TO247 TUBE 0.45K
товару немає в наявності
В кошику  од. на суму  грн.