DI005N06SQ2 Diotec Semiconductor
| Кількість | Ціна |
|---|---|
| 5+ | 75.48 грн |
| 10+ | 47.23 грн |
| 100+ | 26.86 грн |
| 500+ | 20.82 грн |
| 1000+ | 18.85 грн |
| 4000+ | 15.33 грн |
| 8000+ | 14.07 грн |
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Технічний опис DI005N06SQ2 Diotec Semiconductor
Description: IC, Packaging: Bulk, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.3W (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 1295pF @ 25V, Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO.
Інші пропозиції DI005N06SQ2
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| DI005N06SQ2 | Diotec Semiconductor |
 Description: ICPackaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.3W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1295pF @ 25V Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO |
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В кошику од. на суму грн. | |
| DI005N06SQ2 | DIOTEC SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.1A; Idm: 30A; 1.3W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 4.1A Pulsed drain current: 30A Power dissipation: 1.3W Case: SO8 Gate-source voltage: ±20V On-state resistance: 55mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
| DI005N06SQ2 |
|
Виробник: Diotec Semiconductor
Description: IC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1295pF @ 25V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Description: IC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1295pF @ 25V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
товару немає в наявності
В кошику
од. на суму грн.
| DI005N06SQ2 |
|
Виробник: DIOTEC SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.1A; Idm: 30A; 1.3W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.1A
Pulsed drain current: 30A
Power dissipation: 1.3W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.1A; Idm: 30A; 1.3W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.1A
Pulsed drain current: 30A
Power dissipation: 1.3W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.