DI006H03SQ Diotec Semiconductor
Виробник: Diotec SemiconductorDescription: MOSFET 2N/2P-CH 30V 6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 15V, 631pF @ 15V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V, 50mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.7nC @ 10V, 11.4nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3999 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 139.05 грн |
| 10+ | 91.05 грн |
| 100+ | 64.46 грн |
| 500+ | 49.36 грн |
| 1000+ | 45.73 грн |
| 2000+ | 42.65 грн |
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Технічний опис DI006H03SQ Diotec Semiconductor
Description: MOSFET 2N/2P-CH 30V 6A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N and 2 P-Channel (Full Bridge), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.5W (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4.2A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 15V, 631pF @ 15V, Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V, 50mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 11.7nC @ 10V, 11.4nC @ 10V, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 8-SO, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції DI006H03SQ за ціною від 69.72 грн до 217.01 грн
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DI006H03SQ | Виробник : Diotec Semiconductor |
MOSFET MOSFET, SO-8, 30V, 6A, 150C, N+P |
на замовлення 3975 шт: термін постачання 21-30 дні (днів) |
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DI006H03SQ | Виробник : DIOTEC SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET x2; unipolar; 30/-30V; 4.8/-3.3A; 1.5W; SO8 Type of transistor: N/P-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 4.8/-3.3A Power dissipation: 1.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 40/80mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: MOSFET H-Bridge Pulsed drain current: 60...-30A Gate charge: 11.7/11.4nC кількість в упаковці: 4000 шт |
товару немає в наявності |
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DI006H03SQ | Виробник : Diotec Semiconductor |
Description: MOSFET 2N/2P-CH 30V 6A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N and 2 P-Channel (Full Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4.2A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 15V, 631pF @ 15V Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V, 50mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 11.7nC @ 10V, 11.4nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SO Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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DI006H03SQ | Виробник : DIOTEC SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET x2; unipolar; 30/-30V; 4.8/-3.3A; 1.5W; SO8 Type of transistor: N/P-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 4.8/-3.3A Power dissipation: 1.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 40/80mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: MOSFET H-Bridge Pulsed drain current: 60...-30A Gate charge: 11.7/11.4nC |
товару немає в наявності |