DI006P02PW Diotec Semiconductor
Виробник: Diotec SemiconductorDescription: MOSFET POWERQFN 2X2 P -20V -6A 0
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 4.5V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-QFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1242 pF @ 10 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4000+ | 11.15 грн |
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Технічний опис DI006P02PW Diotec Semiconductor
Description: MOSFET POWERQFN 2X2 P -20V -6A 0, Packaging: Tape & Reel (TR), Package / Case: 8-PowerUDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 4.5V, Power Dissipation (Max): 2W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 8-QFN (2x2), Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1242 pF @ 10 V.
Інші пропозиції DI006P02PW за ціною від 11.08 грн до 50.02 грн
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DI006P02PW | Виробник : Diotec Semiconductor |
Description: MOSFET POWERQFN 2X2 P -20V -6A 0 Packaging: Cut Tape (CT) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 4.5V Power Dissipation (Max): 2W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-QFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1242 pF @ 10 V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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DI006P02PW | Виробник : DIOTEC SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: -36A; 2W; QFN2X2 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -6A Pulsed drain current: -36A Power dissipation: 2W Case: QFN2X2 Gate-source voltage: ±12V On-state resistance: 35mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
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DI006P02PW | Виробник : Diotec Semiconductor |
MOSFETs MOSFET, PowerQFN 2x2, -20V, -6A, 150C, P |
товару немає в наявності |
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DI006P02PW | Виробник : DIOTEC SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: -36A; 2W; QFN2X2 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -6A Pulsed drain current: -36A Power dissipation: 2W Case: QFN2X2 Gate-source voltage: ±12V On-state resistance: 35mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |