Технічний опис DI010N03PW-AQ Diotec Semiconductor
Description: MOSFET POWERQFN 2X2 N 30V, Packaging: Bulk, Package / Case: 6-PowerUDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V, Power Dissipation (Max): 1.4W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 6-QFN (2x2), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 15 V, Qualification: AEC-Q101.
Інші пропозиції DI010N03PW-AQ
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| DI010N03PW-AQ | Виробник : DIOTEC SEMICONDUCTOR |
 DI010N03PW-AQ-DIO SMD N channel transistors |
товару немає в наявності |
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DI010N03PW-AQ | Виробник : Diotec Semiconductor |
Description: MOSFET POWERQFN 2X2 N 30V Packaging: Bulk Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Power Dissipation (Max): 1.4W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 6-QFN (2x2) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 15 V Qualification: AEC-Q101 |
товару немає в наявності |
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DI010N03PW-AQ | Виробник : Diotec Semiconductor |
MOSFETs MOSFET, PowerQFN 2x2, 30V, 10A, 150C, N, AEC-Q101 |
товару немає в наявності |