Технічний опис DI016N06PQ2-AQ Diotec Semiconductor
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 60V; 16A; Idm: 50A; 16.7W, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 16A, Power dissipation: 16.7W, Case: Dual PQFN5X6, On-state resistance: 33mΩ, Mounting: SMD, Gate charge: 19nC, Kind of channel: enhancement, Pulsed drain current: 50A, Application: automotive industry.
Інші пропозиції DI016N06PQ2-AQ
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| DI016N06PQ2-AQ | DIOTEC SEMICONDUCTOR |
 Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 60V; 16A; Idm: 50A; 16.7W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 16A Power dissipation: 16.7W Case: Dual PQFN5X6 On-state resistance: 33mΩ Mounting: SMD Gate charge: 19nC Kind of channel: enhancement Pulsed drain current: 50A Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. |
| DI016N06PQ2-AQ |
|
Виробник: DIOTEC SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 16A; Idm: 50A; 16.7W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 16A
Power dissipation: 16.7W
Case: Dual PQFN5X6
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 19nC
Kind of channel: enhancement
Pulsed drain current: 50A
Application: automotive industry
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 16A; Idm: 50A; 16.7W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 16A
Power dissipation: 16.7W
Case: Dual PQFN5X6
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 19nC
Kind of channel: enhancement
Pulsed drain current: 50A
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.