DI018N65D1 Diotec Semiconductor
Виробник: Diotec Semiconductor
Description: MOSFET N-CH 650V 18A TO-252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 50 V
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Технічний опис DI018N65D1 Diotec Semiconductor
Description: MOSFET N-CH 650V 18A TO-252-3, Packaging: Bulk, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V, Power Dissipation (Max): 142W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-252 (DPAK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 50 V.
Інші пропозиції DI018N65D1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
DI018N65D1 | Diotec Semiconductor |
MOSFETs DPAK, N, 650V, 18A, 0.19?, 175C |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. |
 |
DI018N65D1 | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 12.5A; Idm: 54A; 142W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 12.5A Pulsed drain current: 54A Power dissipation: 142W Case: DPAK; TO252AA Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
| DI018N65D1 |
|
Виробник: Diotec Semiconductor
MOSFETs DPAK, N, 650V, 18A, 0.19?, 175C
MOSFETs DPAK, N, 650V, 18A, 0.19?, 175C
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| DI018N65D1 |
|
Виробник: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.5A; Idm: 54A; 142W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.5A
Pulsed drain current: 54A
Power dissipation: 142W
Case: DPAK; TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.5A; Idm: 54A; 142W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.5A
Pulsed drain current: 54A
Power dissipation: 142W
Case: DPAK; TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.