DI022N20PQ-AQ DIOTEC SEMICONDUCTOR
Виробник: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 13A; Idm: 80A; 60W; QFN5x6
Case: QFN5x6
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Pulsed drain current: 80A
Drain current: 13A
Drain-source voltage: 200V
Gate charge: 16nC
On-state resistance: 50mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 60W
Type of transistor: N-MOSFET
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 13A; Idm: 80A; 60W; QFN5x6
Case: QFN5x6
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Pulsed drain current: 80A
Drain current: 13A
Drain-source voltage: 200V
Gate charge: 16nC
On-state resistance: 50mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 60W
Type of transistor: N-MOSFET
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
Відгуки про товар
Написати відгук
Технічний опис DI022N20PQ-AQ DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 200V; 13A; Idm: 80A; 60W; QFN5x6, Case: QFN5x6, Mounting: SMD, Kind of package: reel; tape, Application: automotive industry, Pulsed drain current: 80A, Drain current: 13A, Drain-source voltage: 200V, Gate charge: 16nC, On-state resistance: 50mΩ, Polarisation: unipolar, Gate-source voltage: ±20V, Power dissipation: 60W, Type of transistor: N-MOSFET, Kind of channel: enhancement, кількість в упаковці: 1 шт.
Інші пропозиції DI022N20PQ-AQ
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| DI022N20PQ-AQ | Виробник : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 13A; Idm: 80A; 60W; QFN5x6 Case: QFN5x6 Mounting: SMD Kind of package: reel; tape Application: automotive industry Pulsed drain current: 80A Drain current: 13A Drain-source voltage: 200V Gate charge: 16nC On-state resistance: 50mΩ Polarisation: unipolar Gate-source voltage: ±20V Power dissipation: 60W Type of transistor: N-MOSFET Kind of channel: enhancement |
товару немає в наявності |