Технічний опис DI025N06BPT Diotec Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 65V; 25A; Idm: 100A; 20W; PQFN3X3, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 65V, Drain current: 25A, Pulsed drain current: 100A, Power dissipation: 20W, Case: PQFN3X3, On-state resistance: 21mΩ, Mounting: SMD, Gate charge: 10nC, Kind of channel: enhancement.
Інші пропозиції DI025N06BPT
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| DI025N06BPT | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 65V; 25A; Idm: 100A; 20W; PQFN3X3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 65V Drain current: 25A Pulsed drain current: 100A Power dissipation: 20W Case: PQFN3X3 On-state resistance: 21mΩ Mounting: SMD Gate charge: 10nC Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
| DI025N06BPT |
Виробник: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 25A; Idm: 100A; 20W; PQFN3X3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 20W
Case: PQFN3X3
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 10nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 25A; Idm: 100A; 20W; PQFN3X3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 20W
Case: PQFN3X3
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 10nC
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.