DI025N06PT-AQ DIOTEC SEMICONDUCTOR
Виробник: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 15A; Idm: 80A; 25W; QFN3X3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 15A
Pulsed drain current: 80A
Power dissipation: 25W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 28.57 грн |
| 25+ | 16.67 грн |
| 50+ | 13.43 грн |
| 100+ | 12.35 грн |
| 250+ | 11.11 грн |
| 500+ | 10.28 грн |
| 1000+ | 9.53 грн |
| 2000+ | 9.45 грн |
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Технічний опис DI025N06PT-AQ DIOTEC SEMICONDUCTOR
Description: MOSFET N-CH 65V 25A 8-POWERVDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V, Power Dissipation (Max): 25W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-QFN (3x3), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 65 V, Input Capacitance (Ciss) (Max) @ Vds: 406 pF @ 30 V, Qualification: AEC-Q101.
Інші пропозиції DI025N06PT-AQ за ціною від 10.34 грн до 46.49 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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DI025N06PT-AQ | Diotec Semiconductor |
Description: MOSFET N-CH 65V 25A 8-POWERVDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 65 V Input Capacitance (Ciss) (Max) @ Vds: 406 pF @ 30 V Qualification: AEC-Q101 |
на замовлення 4240 шт: термін постачання 21-31 дні (днів) |
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| DI025N06PT-AQ |
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Виробник: Diotec Semiconductor
Description: MOSFET N-CH 65V 25A 8-POWERVDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 65 V
Input Capacitance (Ciss) (Max) @ Vds: 406 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET N-CH 65V 25A 8-POWERVDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 65 V
Input Capacitance (Ciss) (Max) @ Vds: 406 pF @ 30 V
Qualification: AEC-Q101
на замовлення 4240 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 46.49 грн |
| 11+ | 28.06 грн |
| 100+ | 17.96 грн |
| 500+ | 12.77 грн |
| 1000+ | 11.45 грн |
| 2000+ | 10.34 грн |