Технічний опис DI025N06PT Diotec Semiconductor
Description: MOSFET POWERQFN 3X3 N 65V, Packaging: Bulk, Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V, Power Dissipation (Max): 25W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-QFN (3x3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 65 V, Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 30 V, Input Capacitance (Ciss) (Max) @ Vds: 406 pF @ 30 V.
Інші пропозиції DI025N06PT
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| DI025N06PT | Виробник : DIOTEC SEMICONDUCTOR |
 DI025N06PT-DIO SMD N channel transistors |
товару немає в наявності |
||
 |
DI025N06PT | Виробник : Diotec Semiconductor |
Description: MOSFET POWERQFN 3X3 N 65V Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 30 V Input Capacitance (Ciss) (Max) @ Vds: 406 pF @ 30 V |
товару немає в наявності |
|
 |
DI025N06PT | Виробник : Diotec Semiconductor |
MOSFETs MOSFET, PowerQFN 3x3, 65V, 25A, 150C, N |
товару немає в наявності |