DI025N20PQ Diotec Semiconductor
Виробник: Diotec SemiconductorDescription: MOSFET N , 200V 25A 48mW
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 20A, 10V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-QFN (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 100 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5000+ | 56.29 грн |
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Технічний опис DI025N20PQ Diotec Semiconductor
Description: MOSFET N , 200V 25A 48mW, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 48mOhm @ 20A, 10V, Power Dissipation (Max): 135W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-QFN (5x6), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 100 V, Qualification: AEC-Q101.
Інші пропозиції DI025N20PQ за ціною від 52.02 грн до 145.56 грн
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DI025N20PQ | Виробник : Diotec Semiconductor |
Description: MOSFET N , 200V 25A 48mW Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 48mOhm @ 20A, 10V Power Dissipation (Max): 135W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-QFN (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 100 V Qualification: AEC-Q101 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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DI025N20PQ | Виробник : Diotec Semiconductor |
MOSFETs MOSFET, PowerQFN 5x6, 0, 200V, 25A, 0.048? |
на замовлення 4970 шт: термін постачання 21-30 дні (днів) |
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| DI025N20PQ | Виробник : Diotec Semiconductor |
N-Channel Power MOSFETN-Kanal Leistungs-MOSFET |
товару немає в наявності |
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| DI025N20PQ | Виробник : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 20A; Idm: 100A; 135W; QFN5x6 Case: QFN5x6 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 100A Drain current: 20A Drain-source voltage: 200V Gate charge: 28nC On-state resistance: 48mΩ Polarisation: unipolar Gate-source voltage: ±20V Power dissipation: 135W Type of transistor: N-MOSFET Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
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| DI025N20PQ | Виробник : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 20A; Idm: 100A; 135W; QFN5x6 Case: QFN5x6 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 100A Drain current: 20A Drain-source voltage: 200V Gate charge: 28nC On-state resistance: 48mΩ Polarisation: unipolar Gate-source voltage: ±20V Power dissipation: 135W Type of transistor: N-MOSFET Kind of channel: enhancement |
товару немає в наявності |