DI025N20PQ Diotec Semiconductor
на замовлення 4919 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 268.62 грн |
| 10+ | 207.48 грн |
| 100+ | 107.95 грн |
| 500+ | 107.20 грн |
| 1000+ | 104.18 грн |
| 2500+ | 91.34 грн |
| 5000+ | 86.06 грн |
Відгуки про товар
Написати відгук
Технічний опис DI025N20PQ Diotec Semiconductor
Description: MOSFET N , 200V 25A 48mW, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 48mOhm @ 20A, 10V, Power Dissipation (Max): 135W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-QFN (5x6), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 100 V, Qualification: AEC-Q101.
Інші пропозиції DI025N20PQ
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| DI025N20PQ | Виробник : Diotec Semiconductor |
 N-Channel Power MOSFETN-Kanal Leistungs-MOSFET |
товару немає в наявності |
||
 |
DI025N20PQ | Виробник : Diotec Semiconductor |
Description: MOSFET N , 200V 25A 48mW Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 48mOhm @ 20A, 10V Power Dissipation (Max): 135W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-QFN (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 100 V Qualification: AEC-Q101 |
товару немає в наявності |
|
|
|
DI025N20PQ | Виробник : Diotec Semiconductor |
Description: MOSFET N , 200V 25A 48mW Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 48mOhm @ 20A, 10V Power Dissipation (Max): 135W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-QFN (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 100 V Qualification: AEC-Q101 |
товару немає в наявності |
|
| DI025N20PQ | Виробник : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 20A; Idm: 100A; 135W; QFN5x6 Polarisation: unipolar Gate charge: 28nC On-state resistance: 48mΩ Drain current: 20A Gate-source voltage: ±20V Pulsed drain current: 100A Power dissipation: 135W Drain-source voltage: 200V Kind of channel: enhancement Type of transistor: N-MOSFET Case: QFN5x6 Kind of package: reel; tape Mounting: SMD |
товару немає в наявності |