DI025N20PQ Diotec Semiconductor
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 190.88 грн |
| 10+ | 121.47 грн |
| 100+ | 72.49 грн |
| 500+ | 59.02 грн |
| 5000+ | 49.70 грн |
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Технічний опис DI025N20PQ Diotec Semiconductor
Description: MOSFET N , 200V 25A 48mW, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: 8-QFN (5x6), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 135W (Tc), Rds On (Max) @ Id, Vgs: 48mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Інші пропозиції DI025N20PQ
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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DI025N20PQ | Diotec Semiconductor |
 Description: MOSFET N , 200V 25A 48mWQualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: 8-QFN (5x6) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 135W (Tc) Rds On (Max) @ Id, Vgs: 48mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. |
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DI025N20PQ | Diotec Semiconductor |
Description: MOSFET N , 200V 25A 48mW Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 100 V Grade: Automotive Supplier Device Package: 8-QFN (5x6) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 135W (Tc) Rds On (Max) @ Id, Vgs: 48mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
| DI025N20PQ |
|
Виробник: Diotec Semiconductor
Description: MOSFET N , 200V 25A 48mW
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 8-QFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 135W (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N , 200V 25A 48mW
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 8-QFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 135W (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| DI025N20PQ |
|
Виробник: Diotec Semiconductor
Description: MOSFET N , 200V 25A 48mW
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 100 V
Grade: Automotive
Supplier Device Package: 8-QFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 135W (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N , 200V 25A 48mW
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 100 V
Grade: Automotive
Supplier Device Package: 8-QFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 135W (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.