Технічний опис DI028N10PQ2 DIOTEC SEMICONDUCTOR
Description: DI028N10PQ2, Packaging: Bulk, Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 32.7W (Tc), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1028pF @ 50V, Rds On (Max) @ Id, Vgs: 21mOhm @ 7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TDSON-8-4.
Інші пропозиції DI028N10PQ2
| Фото | Назва | Виробник | Інформація |
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DI028N10PQ2 | Виробник : Diotec Semiconductor |
 Description: DI028N10PQ2Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 32.7W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1028pF @ 50V Rds On (Max) @ Id, Vgs: 21mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TDSON-8-4 |
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