DI028P03PT Diotec Semiconductor
Виробник: Diotec Semiconductor
Description: IC
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-QFN (3x3)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Bulk
Відгуки про товар
Написати відгук
Технічний опис DI028P03PT Diotec Semiconductor
Description: IC, Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-QFN (3x3), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 40W (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Bulk.
Інші пропозиції DI028P03PT
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
DI028P03PT | Виробник : Diotec Semiconductor |
MOSFETs MOSFET, PowerQFN 3x3, -30V, -28A, 150C, P |
товару немає в наявності |