DI045N03PT Diotec Semiconductor
Виробник: Diotec SemiconductorDescription: MOSFET POWERQFN 3X3 N 30V 45A 0.
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 24A, 10V
Power Dissipation (Max): 16W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5000+ | 13.68 грн |
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Технічний опис DI045N03PT Diotec Semiconductor
Description: MOSFET POWERQFN 3X3 N 30V 45A 0., Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), Rds On (Max) @ Id, Vgs: 4.4mOhm @ 24A, 10V, Power Dissipation (Max): 16W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-QFN (3x3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V.
Інші пропозиції DI045N03PT за ціною від 16.31 грн до 71.02 грн
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DI045N03PT | Виробник : Diotec Semiconductor |
Description: MOSFET POWERQFN 3X3 N 30V 45A 0. Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 24A, 10V Power Dissipation (Max): 16W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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DI045N03PT | Виробник : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 280A; 16W; QFN3X3 Type of transistor: N-MOSFET Case: QFN3X3 Drain-source voltage: 30V Drain current: 30A On-state resistance: 6.2mΩ Power dissipation: 16W Polarisation: unipolar Kind of package: reel; tape Gate charge: 53nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 280A Mounting: SMD кількість в упаковці: 5000 шт |
товару немає в наявності |
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DI045N03PT | Виробник : Diotec Semiconductor |
MOSFETs MOSFET, PowerQFN 3x3, 30V, 45A, 150C, N |
товару немає в наявності |
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DI045N03PT | Виробник : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 280A; 16W; QFN3X3 Type of transistor: N-MOSFET Case: QFN3X3 Drain-source voltage: 30V Drain current: 30A On-state resistance: 6.2mΩ Power dissipation: 16W Polarisation: unipolar Kind of package: reel; tape Gate charge: 53nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 280A Mounting: SMD |
товару немає в наявності |