DI049N06PTK-AQ Diotec Semiconductor
Виробник: Diotec Semiconductor
Description: MOSFET POWERQFN 3X3 N 65V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Bulk
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1691 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 65 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-QFN (3x3)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
FET Type: N-Channel
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Технічний опис DI049N06PTK-AQ Diotec Semiconductor
Description: MOSFET POWERQFN 3X3 N 65V, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Bulk, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 1691 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V, Drain to Source Voltage (Vdss): 65 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: 8-QFN (3x3), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 25W (Tc), Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 49A (Tc), FET Type: N-Channel.
Інші пропозиції DI049N06PTK-AQ
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
DI049N06PTK-AQ | Виробник : Diotec Semiconductor |
MOSFETs MOSFET, PowerQFN 3x3, 65V, 49A, 150C, N, AEC-Q101 |
товару немає в наявності |