DI050N06PQ2-AQ Diotec Semiconductor



Виробник: Diotec Semiconductor
MOSFETs PowerQFN 5x6-Dual, N+N, 60V, 50A, 8.5m?, 175C, AEC-Q101
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Мінімальне замовлення: 5000 шт
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Технічний опис DI050N06PQ2-AQ Diotec Semiconductor

Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 60V; 35A; Idm: 280A; 40.5W, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 35A, Pulsed drain current: 280A, Power dissipation: 40.5W, Case: QFN5x6, Gate-source voltage: ±20V, On-state resistance: 8.5mΩ, Mounting: SMD, Gate charge: 36.4nC, Kind of package: reel; tape, Kind of channel: enhancement, Application: automotive industry.

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DI050N06PQ2-AQ DIOTEC SEMICONDUCTOR Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 35A; Idm: 280A; 40.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35A
Pulsed drain current: 280A
Power dissipation: 40.5W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 36.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
DI050N06PQ2-AQ
Виробник: DIOTEC SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 35A; Idm: 280A; 40.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35A
Pulsed drain current: 280A
Power dissipation: 40.5W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 36.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.