DI050N06PQ2-AQ DIOTEC SEMICONDUCTOR
Виробник: DIOTEC SEMICONDUCTORCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 35A; Idm: 280A; 40.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35A
Pulsed drain current: 280A
Power dissipation: 40.5W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 36.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
кількість в упаковці: 1 шт
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Технічний опис DI050N06PQ2-AQ DIOTEC SEMICONDUCTOR
Description: DI050N06PQ2-AQ, Packaging: Bulk, Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 40.5W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1610pF @ 30V, Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V, Gate Charge (Qg) (Max) @ Vgs: 36.4nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TDSON-8-4, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції DI050N06PQ2-AQ
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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DI050N06PQ2-AQ | Виробник : Diotec Semiconductor |
Description: DI050N06PQ2-AQ Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 40.5W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1610pF @ 30V Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 36.4nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TDSON-8-4 Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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| DI050N06PQ2-AQ | Виробник : Diotec Semiconductor |
|
товару немає в наявності |
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| DI050N06PQ2-AQ | Виробник : DIOTEC SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 35A; Idm: 280A; 40.5W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 35A Pulsed drain current: 280A Power dissipation: 40.5W Case: QFN5x6 Gate-source voltage: ±20V On-state resistance: 8.5mΩ Mounting: SMD Gate charge: 36.4nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |