DI050P03PT Diotec Semiconductor

Description: MOSFET POWERQFN 3X3 P -30V, Input Capacitance (Ciss) (Max) @ Vds: 3721 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-QFN (3x3), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 39W (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Bulk.