DI065N08D1-AQ Diotec Semiconductor
Виробник: Diotec Semiconductor
Description: MOSFET N-CH 80V 65A TO-252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1812 pF @ 30 V
Qualification: AEC-Q101
| Кількість | Ціна |
|---|---|
| 3+ | 140.73 грн |
| 10+ | 86.61 грн |
| 100+ | 58.65 грн |
| 500+ | 43.80 грн |
| 1000+ | 40.18 грн |
| 2500+ | 36.27 грн |
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Технічний опис DI065N08D1-AQ Diotec Semiconductor
Description: MOSFET N-CH 80V 65A TO-252-3, Packaging: Bulk, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 65A (Tc), Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V, Power Dissipation (Max): 62.5W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252 (DPAK), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1812 pF @ 30 V, Qualification: AEC-Q101.
Інші пропозиції DI065N08D1-AQ за ціною від 35.01 грн до 146.75 грн
| Фото | Назва | Виробник | Інформація |
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DI065N08D1-AQ | Виробник : Diotec Semiconductor |
MOSFETs DPAK, N, 80V, 65A, 7m?, 175C, AEC-Q101 |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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| DI065N08D1-AQ | Виробник : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 65A; Idm: 300A; 62.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 65A Pulsed drain current: 300A Power dissipation: 62.5W Case: DPAK; TO252AA On-state resistance: 7mΩ Mounting: SMD Gate charge: 35nC Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |