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DI070P04PQ-AQ

DI070P04PQ-AQ Diotec Semiconductor

di070p04pq.pdf
Виробник: Diotec Semiconductor
Description: MOSFET, POWERQFN 5X6, -40V, -70A
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7560 pF @ 20 V
Qualification: AEC-Q101
на замовлення 4018 шт:
термін постачання 21-31 дні (днів)
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Технічний опис DI070P04PQ-AQ Diotec Semiconductor

Description: MOSFET, POWERQFN 5X6, -40V, -70A, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V, Power Dissipation (Max): 46W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-QFN (5x6), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7560 pF @ 20 V, Qualification: AEC-Q101.

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DI070P04PQ-AQ DI070P04PQ-AQ Diotec Semiconductor di070p04pq.pdf Description: MOSFET, POWERQFN 5X6, -40V, -70A
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7560 pF @ 20 V
Qualification: AEC-Q101
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DI070P04PQ-AQ DI070P04PQ-AQ Diotec Semiconductor di070p04pq.pdf MOSFETs MOSFET, PowerQFN 5x6, -40V, -70A, 150C, P, AEC-Q101
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DI070P04PQ-AQ DI070P04PQ-AQ DIOTEC SEMICONDUCTOR di070p04pq.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -70A; Idm: -300A; 46W; QFN5x6
Case: QFN5x6
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Pulsed drain current: -300A
Drain current: -70A
Drain-source voltage: -40V
Gate charge: 125nC
On-state resistance: 6.5mΩ
Gate-source voltage: ±20V
Power dissipation: 46W
Type of transistor: P-MOSFET
Polarisation: unipolar
Kind of channel: enhancement
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DI070P04PQ-AQ di070p04pq.pdf
DI070P04PQ-AQ
Виробник: Diotec Semiconductor
Description: MOSFET, POWERQFN 5X6, -40V, -70A
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7560 pF @ 20 V
Qualification: AEC-Q101
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DI070P04PQ-AQ di070p04pq.pdf
DI070P04PQ-AQ
Виробник: Diotec Semiconductor
MOSFETs MOSFET, PowerQFN 5x6, -40V, -70A, 150C, P, AEC-Q101
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DI070P04PQ-AQ di070p04pq.pdf
DI070P04PQ-AQ
Виробник: DIOTEC SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -70A; Idm: -300A; 46W; QFN5x6
Case: QFN5x6
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Pulsed drain current: -300A
Drain current: -70A
Drain-source voltage: -40V
Gate charge: 125nC
On-state resistance: 6.5mΩ
Gate-source voltage: ±20V
Power dissipation: 46W
Type of transistor: P-MOSFET
Polarisation: unipolar
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.