DI074N06D1K Diotec Semiconductor
Виробник: Diotec Semiconductor
Description: IC
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 1691 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 65 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 56.8W (Tc)
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Технічний опис DI074N06D1K Diotec Semiconductor
Description: IC, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Bulk, Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 74A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Input Capacitance (Ciss) (Max) @ Vds: 1691 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V, Drain to Source Voltage (Vdss): 65 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: TO-252 (DPAK), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 56.8W (Tc).
Інші пропозиції DI074N06D1K
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| DI074N06D1K | Виробник : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 65V; 74A; Idm: 300A; 56.8W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 65V Drain current: 74A Pulsed drain current: 300A Power dissipation: 56.8W Case: DPAK; TO252AA On-state resistance: 5.8mΩ Mounting: SMD Gate charge: 31nC Kind of channel: enhancement |
товару немає в наявності |