Технічний опис DI075N08PQ Diotec Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 80V; 47A; Idm: 350A; 45W; QFN5x6, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 80V, Drain current: 47A, Pulsed drain current: 350A, Power dissipation: 45W, Case: QFN5x6, Gate-source voltage: ±20V, On-state resistance: 4.2mΩ, Mounting: SMD, Gate charge: 89nC, Kind of package: reel; tape, Kind of channel: enhancement, кількість в упаковці: 1 шт.
Інші пропозиції DI075N08PQ
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| DI075N08PQ | Виробник : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 47A; Idm: 350A; 45W; QFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 47A Pulsed drain current: 350A Power dissipation: 45W Case: QFN5x6 Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 89nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
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| DI075N08PQ | Виробник : Diotec Semiconductor |
товару немає в наявності |
|||
| DI075N08PQ | Виробник : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 47A; Idm: 350A; 45W; QFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 47A Pulsed drain current: 350A Power dissipation: 45W Case: QFN5x6 Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 89nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |