Технічний опис DI080N10D1 Diotec Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 50A; Idm: 400A; 56.8W; DPAK, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 50A, Pulsed drain current: 400A, Power dissipation: 56.8W, Case: DPAK, Gate-source voltage: ±20V, On-state resistance: 6mΩ, Mounting: SMD, Gate charge: 75nC, Kind of package: reel; tape, Kind of channel: enhancement.
Інші пропозиції DI080N10D1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| DI080N10D1 | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 50A; Idm: 400A; 56.8W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 50A Pulsed drain current: 400A Power dissipation: 56.8W Case: DPAK Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: SMD Gate charge: 75nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
| DI080N10D1 |
Виробник: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; Idm: 400A; 56.8W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 400A
Power dissipation: 56.8W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; Idm: 400A; 56.8W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 400A
Power dissipation: 56.8W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.